Broadcom AFBR-S4N44C013 Silicon Photomultiplier Array

Author : Broadcom Published Time : 2018-08-06
Broadcom® AFBR-S4N44C013 Silicon Photomultiplier (SiPM) Array is designed for ultra-sensitive precision measurement of single photons. This photomultiplier provides an active area of 3.72mm x 3.72mm. The high packing density of the single chip is achieved using Through-Silicon-Via (TSV) technology. A larger area can be covered by tiling multiple AFBR-S4N44C013 arrays almost without any edge losses. The passivation layer is made by a glass highly transparent down to UV wavelengths. This results in a broad response in the visible light spectrum with high sensitivity towards blue and near-UV region of the light spectrum.

Features

High Photo Detection Efficiency (PDE) of more than 55% at 420nmHigh fill factorsExcellent Single Photon Time Resolution (SPTR) and CRT180mV (3 sigma) breakdown voltage with good uniformity

Specifications

420nm spectral range26.9V breakdown voltage26mV/K temperature coefficient of breakdown voltagePhoto Detection Efficiency:43% (typical) measure at 3V above breakdown55% (performance) at 7V above breakdown120kcps/mm2 (typical) dark count rate per unit

Applications

X-ray and gamma ray detectionGamma ray spectroscopySafety and securityNuclear medicinePositron emission tomographyLife sciences
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