GaN Systems GS66516B 650V GaN Bottom-side Cooled Transistor
GaN Systems GS66516B 650V GaN power transistor is designed for very low junction-to-case thermal resistance for demanding high power applications. The GS66516B is offered in a low inductance, low thermal resistance GaNPX™ package with a bottom-side cooled configuration. GaN on silicon power transistors allow for high current, high voltage breakdown, and high switching frequency.
Features
650V E-HEMTLow inductance GaNPX™ packaging60A current IDS(max)25mΩ Rds(on) Small 11mm x 9mm PCB footprintBottom-side cooled
Applications
High-efficiency power conversionHigh-density power conversionAC-DC convertersBridgeless totem pole PFCZVS Phase shifted full bridgeHalf Bridge topologiesSynchronous buck or boostUninterruptable power supplies
Application Notes
Design Considerations of Paralleled GaN HEMT-based Half Bridge Power Stage
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