Nombor Bahagian :
EPC2107ENGRT
Penerangan :
GAN TRANS 3N-CH 100V BUMPED DIE
Jenis FET :
3 N-Channel (Half Bridge + Synchronous Bootstrap)
Ciri FET :
GaNFET (Gallium Nitride)
Salurkan ke Voltan Sumber (Vdss) :
100V
Semasa - Saliran berterusan (Id) @ 25 ° C :
1.7A, 500mA
Rds On (Max) @ Id, Vgs :
320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 100µA, 2.5V @ 20µA
Caj Gate (Qg) (Max) @ Vgs :
0.16nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
16pF @ 50V, 7pF @ 50V
Suhu Operasi :
-40°C ~ 150°C (TJ)
Jenis Pemasangan :
Surface Mount
Pakej Peranti Pembekal :
9-BGA (1.35x1.35)