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Sekiranya lokasi anda tidak disenaraikan, sila pilih salah satu daripada yang berikut:

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  1. Rumah
  2. Produk
  3. DRAM
  4. LPDDR4
  5. K4FBE3D4HM-GHCL

Samsung Semiconductor - K4FBE3D4HM-GHCL

KEY Part #: K7359775

[18364pcs Stock]

    Nombor Bahagian:
    K4FBE3D4HM-GHCL
    Pengeluar:
    Samsung Semiconductor
    Penerangan terperinci:
    32 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.
    Masa peneraju standard pengeluar:
    Dalam stok
    Jangka hayat:
    Setahun
    Chip Dari:
    Hong Kong
    RoHS:
    Kaedah pembayaran:
    Cara penghantaran:
    Kategori Keluarga:
    KEY Components Co., LTD adalah Pengedar Komponen Elektronik yang menawarkan kategori produk termasuk: ...
    Kelebihan daya saing:
    We specialize in Samsung Semiconductor K4FBE3D4HM-GHCL electronic components. K4FBE3D4HM-GHCL can be shipped within 24 hours after order. If you have any demands for K4FBE3D4HM-GHCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4FBE3D4HM-GHCL Atribut Produk

    Nombor Bahagian : K4FBE3D4HM-GHCL
    Pengeluar : Samsung Semiconductor
    Penerangan : 32 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production
    Siri : DDR3
    Ketumpatan : 32 Gb
    Org. : x32
    kelajuan : 4266 Mbps
    voltan : 1.8 / 1.1 / 1.1 V
    Temp. : -40 ~ 105 °C
    pakej : 200FBGA
    Status produk : Mass Production

    Berita terkini

    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Unlocking the Power of Cloud Computing
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    Inside the building blocks of the 5G future
    The Ultra-Low Latency SSD, Z-SSD
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Anda Juga Boleh Berminat Dalam
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      DDR4 VLP RDIMM 16 GB 2R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

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      DDR4 VLP RDIMM 16 GB 2R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A4K40BM0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2133 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M392A4K40BM0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2400 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

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