IPB042N10N3GE8187ATMA1 Harga (USD) [61829pcs Stock]
- 1 pcs$0.63555
- 1,000 pcs$0.63239
- Nombor Bahagian:
- IPB042N10N3GE8187ATMA1
- Pengeluar:
- Infineon Technologies
- Penerangan terperinci:
- MOSFET N-CH 100V 100A TO263-3.
- Masa peneraju standard pengeluar:
- Dalam stok
- Jangka hayat:
- Setahun
- Chip Dari:
- Hong Kong
- RoHS:
- Kaedah pembayaran:
-
- Cara penghantaran:
- Kategori Keluarga:
- KEY Components Co., LTD adalah Pengedar Komponen Elektronik yang menawarkan kategori produk termasuk: ...
- Kelebihan daya saing:
- We specialize in Infineon Technologies IPB042N10N3GE8187ATMA1 electronic components. IPB042N10N3GE8187ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB042N10N3GE8187ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB042N10N3GE8187ATMA1 Atribut Produk
Nombor Bahagian :
IPB042N10N3GE8187ATMA1
Pengeluar :
Infineon Technologies
Penerangan :
MOSFET N-CH 100V 100A TO263-3
Siri :
OptiMOS™
Status Bahagian :
Active
Jenis FET :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) :
100V
Semasa - Saliran berterusan (Id) @ 25 ° C :
100A (Tc)
Voltan Drive (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
4.2 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 150µA
Caj Gate (Qg) (Max) @ Vgs :
117nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
8410pF @ 50V
Ciri FET :
-
Pemberlakuan Kuasa (Max) :
214W (Tc)
Suhu Operasi :
-55°C ~ 175°C (TJ)
Jenis Pemasangan :
Surface Mount
Pakej Peranti Pembekal :
D²PAK (TO-263AB)
Pakej / Kes :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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