ISSI, Integrated Silicon Solution Inc - IS42SM16160K-6BLI-TR

KEY Part #: K938172

Penerangan terperinci:: IC DRAM 256M PARALLEL 54TFBGA. DRAM 256M, 3.3V, 166Mhz Mobile SDRAM

Kategori Keluarga:: KEY Components Co., LTD adalah Pengedar Komponen Elektronik yang menawarkan kategori produk termasuk: ...

Kelebihan daya saing:: We specialize in ISSI, Integrated Silicon Solution Inc IS42SM16160K-6BLI-TR electronic components. IS42SM16160K-6BLI-TR can be shipped within 24 hours after order. If you have any demands for IS42SM16160K-6BLI-TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

Nombor Bahagian : IS42SM16160K-6BLI-TR

Pengeluar : ISSI, Integrated Silicon Solution Inc

Penerangan : IC DRAM 256M PARALLEL 54TFBGA

Siri : -

Status Bahagian : Active

Jenis Memori : Volatile

Format Memori : DRAM

Teknologi : SDRAM - Mobile

Saiz Memori : 256Mb (16M x 16)

Frekuensi Jam : 166MHz

Tulis Masa Kitar - Kata, Halaman : -

Masa Capaian : 5.5ns

Antara Muka Memori : Parallel

Voltan - Bekalan : 2.7V ~ 3.6V

Suhu Operasi : -40°C ~ 85°C (TA)

Jenis Pemasangan : Surface Mount

Pakej / Kes : 54-TFBGA

Pakej Peranti Pembekal : 54-TFBGA (8x8)

Silicom MinnowBoard Turbot

Anda Juga Boleh Berminat Dalam

AT27C4096-90PU

Microchip Technology

IC EPROM 4M PARALLEL 40DIP. EPROM 4Mb (256Kx16) OTP 5V 90ns
71V3576S150PFGI

IDT, Integrated Device Technology Inc

IC SRAM 4.5M PARALLEL 100TQFP.
71V3577S75PFGI

IDT, Integrated Device Technology Inc

IC SRAM 4.5M PARALLEL 100TQFP. SRAM 4M 3.3V I/O PBSRAM SLOW X
W94AD2KBJX5I

Winbond Electronics

IC DRAM 1G PARALLEL 90VFBGA. DRAM 1G mDDR, x32, 200MHz, Ind temp
TC58BYG2S0HBAI4

Toshiba Memory America, Inc.

4GB SLC BENAND 24NM BGA 9X11 EE. NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
TC58BVG2S0HBAI4

Toshiba Memory America, Inc.

IC FLASH 4G PARALLEL 63TFBGA. NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM)

Bahagian panas