Nombor Bahagian :
TPN1R603PL,L1Q
Pengeluar :
Toshiba Semiconductor and Storage
Penerangan :
X35 PB-F POWER MOSFET TRANSISTOR
Teknologi :
MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) :
30V
Semasa - Saliran berterusan (Id) @ 25 ° C :
80A (Tc)
Voltan Drive (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.6 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 300µA
Caj Gate (Qg) (Max) @ Vgs :
41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
3900pF @ 15V
Pemberlakuan Kuasa (Max) :
104W (Tc)
Jenis Pemasangan :
Surface Mount
Pakej Peranti Pembekal :
8-TSON Advance (3.3x3.3)
Pakej / Kes :
8-PowerVDFN