SIHP11N80E-GE3 Harga (USD) [23918pcs Stock]
- 1 pcs$1.72314
- 10 pcs$1.53804
- 100 pcs$1.26111
- 500 pcs$0.96882
- 1,000 pcs$0.81708
- Nombor Bahagian:
- SIHP11N80E-GE3
- Pengeluar:
- Vishay Siliconix
- Penerangan terperinci:
- MOSFET N-CH 800V 12A TO220AB.
- Masa peneraju standard pengeluar:
- Dalam stok
- Jangka hayat:
- Setahun
- Chip Dari:
- Hong Kong
- RoHS:
- Kaedah pembayaran:
-
- Cara penghantaran:
- Kategori Keluarga:
- KEY Components Co., LTD adalah Pengedar Komponen Elektronik yang menawarkan kategori produk termasuk: ...
- Kelebihan daya saing:
- We specialize in Vishay Siliconix SIHP11N80E-GE3 electronic components. SIHP11N80E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHP11N80E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHP11N80E-GE3 Atribut Produk
Nombor Bahagian :
SIHP11N80E-GE3
Pengeluar :
Vishay Siliconix
Penerangan :
MOSFET N-CH 800V 12A TO220AB
Siri :
E
Status Bahagian :
Active
Jenis FET :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) :
800V
Semasa - Saliran berterusan (Id) @ 25 ° C :
12A (Tc)
Voltan Drive (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
440 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Caj Gate (Qg) (Max) @ Vgs :
88nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1670pF @ 100V
Ciri FET :
-
Pemberlakuan Kuasa (Max) :
179W (Tc)
Suhu Operasi :
-55°C ~ 150°C (TJ)
Jenis Pemasangan :
Through Hole
Pakej Peranti Pembekal :
TO-220AB
Pakej / Kes :
TO-220-3
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