Nombor Bahagian :
TPH6R30ANL,L1Q
Pengeluar :
Toshiba Semiconductor and Storage
Penerangan :
X35 PB-F POWER MOSFET TRANSISTOR
Teknologi :
MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) :
100V
Semasa - Saliran berterusan (Id) @ 25 ° C :
66A (Ta), 45A (Tc)
Voltan Drive (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
6.3 mOhm @ 22.5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 500µA
Caj Gate (Qg) (Max) @ Vgs :
55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
4300pF @ 50V
Pemberlakuan Kuasa (Max) :
2.5W (Ta), 54W (Tc)
Jenis Pemasangan :
Surface Mount
Pakej Peranti Pembekal :
8-SOP Advance (5x5)
Pakej / Kes :
8-PowerVDFN