ISSI, Integrated Silicon Solution Inc - IS43R86400F-6BLI

KEY Part #: K936989

Penerangan terperinci:: IC DRAM 512M PARALLEL 166MHZ. DRAM 512M 64Mx8 166MHz DDR 2.5V

Kategori Keluarga:: KEY Components Co., LTD adalah Pengedar Komponen Elektronik yang menawarkan kategori produk termasuk: ...

Kelebihan daya saing:: We specialize in ISSI, Integrated Silicon Solution Inc IS43R86400F-6BLI electronic components. IS43R86400F-6BLI can be shipped within 24 hours after order. If you have any demands for IS43R86400F-6BLI, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

Nombor Bahagian : IS43R86400F-6BLI

Pengeluar : ISSI, Integrated Silicon Solution Inc

Penerangan : IC DRAM 512M PARALLEL 166MHZ

Siri : -

Status Bahagian : Active

Jenis Memori : Volatile

Format Memori : DRAM

Teknologi : SDRAM - DDR

Saiz Memori : 512Mb (64M x 8)

Frekuensi Jam : 166MHz

Tulis Masa Kitar - Kata, Halaman : 15ns

Masa Capaian : 700ps

Antara Muka Memori : Parallel

Voltan - Bekalan : 2.3V ~ 2.7V

Suhu Operasi : -40°C ~ 85°C (TA)

Jenis Pemasangan : Surface Mount

Pakej / Kes : 60-TFBGA

Pakej Peranti Pembekal : 60-TFBGA (13x8)

Silicom MinnowBoard Turbot

Anda Juga Boleh Berminat Dalam

AT28HC256E-12SU-T

Microchip Technology

IC EEPROM 256K PARALLEL 28SOIC. EEPROM 120NS, SOIC, IND TEMP, GREEN
AT28BV256-20SU

Microchip Technology

IC EEPROM 256K PARALLEL 28SOIC. EEPROM 256K 2.7V - 3.6V SDP- 200NS IND TEMP
AT28C256-15SU

Microchip Technology

IC EEPROM 256K PARALLEL 28SOIC. EEPROM 256K 11MIL GRIND 150NS IND TEMP
AT28HC256E-90SU-T

Microchip Technology

IC EEPROM 256K PARALLEL 28SOIC. EEPROM 90NS, SOIC, IND TEMP, GREEN
71V25761S183PFGI

IDT, Integrated Device Technology Inc

IC SRAM 4.5M PARALLEL 100TQFP. SRAM 128Kx36 SYNC 3.3V PIPELINED BURST SRAM
W29N04GVBIAF

Winbond Electronics

IC FLASH 4G PARALLEL 63VFBGA. NAND Flash 4G-bit NAND flash, 3V, 4-bit ECC, 3V, x8

Bahagian panas