Nombor Bahagian :
TPW1R306PL,L1Q
Pengeluar :
Toshiba Semiconductor and Storage
Penerangan :
X35 PB-F POWER MOSFET TRANSISTOR
Teknologi :
MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) :
60V
Semasa - Saliran berterusan (Id) @ 25 ° C :
260A (Tc)
Voltan Drive (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.29 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Caj Gate (Qg) (Max) @ Vgs :
91nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
8100pF @ 30V
Pemberlakuan Kuasa (Max) :
960mW (Ta), 170W (Tc)
Jenis Pemasangan :
Surface Mount
Pakej Peranti Pembekal :
8-DSOP Advance
Pakej / Kes :
8-PowerVDFN