Toshiba Memory America, Inc. - THGBMNG5D1LBAIL

KEY Part #: K936897

THGBMNG5D1LBAIL Harga (USD) [15336pcs Stock]

  • 1 pcs$2.98795

Nombor Bahagian:
THGBMNG5D1LBAIL
Pengeluar:
Toshiba Memory America, Inc.
Penerangan terperinci:
4GB NAND 15NM EMBEDDED MULTIMEDI.
Masa peneraju standard pengeluar:
Dalam stok
Jangka hayat:
Setahun
Chip Dari:
Hong Kong
RoHS:
Kaedah pembayaran:
Cara penghantaran:
Kategori Keluarga:
KEY Components Co., LTD adalah Pengedar Komponen Elektronik yang menawarkan kategori produk termasuk: ...
Kelebihan daya saing:
We specialize in Toshiba Memory America, Inc. THGBMNG5D1LBAIL electronic components. THGBMNG5D1LBAIL can be shipped within 24 hours after order. If you have any demands for THGBMNG5D1LBAIL, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

THGBMNG5D1LBAIL Atribut Produk

Nombor Bahagian : THGBMNG5D1LBAIL
Pengeluar : Toshiba Memory America, Inc.
Penerangan : 4GB NAND 15NM EMBEDDED MULTIMEDI
Siri : e•MMC™
Status Bahagian : Active
Jenis Memori : Non-Volatile
Format Memori : FLASH
Teknologi : FLASH - NAND (MLC)
Saiz Memori : 4G (512M x 8)
Frekuensi Jam : 200MHz
Tulis Masa Kitar - Kata, Halaman : -
Masa Capaian : -
Antara Muka Memori : eMMC
Voltan - Bekalan : 2.7V ~ 3.6V
Suhu Operasi : -25°C ~ 85°C (TA)
Jenis Pemasangan : Surface Mount
Pakej / Kes : 153-WFBGA
Pakej Peranti Pembekal : 153-WFBGA (11.5x13)

Anda Juga Boleh Berminat Dalam
  • 71V30S55TFG8

    IDT, Integrated Device Technology Inc

    IC SRAM 8K PARALLEL 64TQFP. SRAM 1Kx8 ASYNCHRONOUS 3.3V DUAL-PORT RAM

  • AT28C256E-15SU

    Microchip Technology

    IC EEPROM 256K PARALLEL 28SOIC. EEPROM 256K HI-ENDURANCE SDP- 150NS IND TEMP

  • 71V25761S183PFGI

    IDT, Integrated Device Technology Inc

    IC SRAM 4.5M PARALLEL 100TQFP. SRAM 128Kx36 SYNC 3.3V PIPELINED BURST SRAM

  • W29N04GZBIBA

    Winbond Electronics

    IC FLASH 4G PARALLEL 63VFBGA. NAND Flash 4G-bit NAND flash, 1.8V, 4-bit ECC, 1.8V, x8

  • W29N04GWBIBA

    Winbond Electronics

    IC FLASH 4G PARALLEL 63VFBGA. NAND Flash 4G-bit NAND flash, 1.8V, 4-bit ECC, 1.8V, x16

  • EDB1332BDBH-1DAAT-F-D

    Micron Technology Inc.

    IC DRAM 1G PARALLEL 134VFBGA. DRAM LPDDR2 1G 32MX32 FBGA