ISSI, Integrated Silicon Solution Inc - IS43LR16320C-6BL

KEY Part #: K936868

Penerangan terperinci:: IC DRAM 512M PARALLEL 60TFBGA. DRAM 512M, 1.8V, 166Mhz Mobile DDR SDRAM

Kategori Keluarga:: KEY Components Co., LTD adalah Pengedar Komponen Elektronik yang menawarkan kategori produk termasuk: ...

Kelebihan daya saing:: We specialize in ISSI, Integrated Silicon Solution Inc IS43LR16320C-6BL electronic components. IS43LR16320C-6BL can be shipped within 24 hours after order. If you have any demands for IS43LR16320C-6BL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

Nombor Bahagian : IS43LR16320C-6BL

Pengeluar : ISSI, Integrated Silicon Solution Inc

Penerangan : IC DRAM 512M PARALLEL 60TFBGA

Siri : -

Status Bahagian : Active

Jenis Memori : Volatile

Format Memori : DRAM

Teknologi : SDRAM - Mobile LPDDR

Saiz Memori : 512Mb (32M x 16)

Frekuensi Jam : 166MHz

Tulis Masa Kitar - Kata, Halaman : 15ns

Masa Capaian : 5.5ns

Antara Muka Memori : Parallel

Voltan - Bekalan : 1.7V ~ 1.95V

Suhu Operasi : 0°C ~ 70°C (TA)

Jenis Pemasangan : Surface Mount

Pakej / Kes : 60-TFBGA

Pakej Peranti Pembekal : 60-TFBGA (8x10)

Silicom MinnowBoard Turbot

Anda Juga Boleh Berminat Dalam

71V30S55TFG8

IDT, Integrated Device Technology Inc

IC SRAM 8K PARALLEL 64TQFP. SRAM 1Kx8 ASYNCHRONOUS 3.3V DUAL-PORT RAM
AT28C256E-15SU

Microchip Technology

IC EEPROM 256K PARALLEL 28SOIC. EEPROM 256K HI-ENDURANCE SDP- 150NS IND TEMP
IS61LP6432A-133TQLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 2M PARALLEL 100TQFP. SRAM 2Mb 64Kx32 133Mhz Sync SRAM 3.3v
71V25761S183PFGI

IDT, Integrated Device Technology Inc

IC SRAM 4.5M PARALLEL 100TQFP. SRAM 128Kx36 SYNC 3.3V PIPELINED BURST SRAM
W29N04GZBIBA

Winbond Electronics

IC FLASH 4G PARALLEL 63VFBGA. NAND Flash 4G-bit NAND flash, 1.8V, 4-bit ECC, 1.8V, x8
W29N04GWBIBA

Winbond Electronics

IC FLASH 4G PARALLEL 63VFBGA. NAND Flash 4G-bit NAND flash, 1.8V, 4-bit ECC, 1.8V, x16

Bahagian panas