IAUS165N08S5N029ATMA1 Harga (USD) [42793pcs Stock]
- 1 pcs$0.91372
- Nombor Bahagian:
- IAUS165N08S5N029ATMA1
- Pengeluar:
- Infineon Technologies
- Penerangan terperinci:
- MOSFET N-CH 80V 660A PG-HSOG-8-1.
- Masa peneraju standard pengeluar:
- Dalam stok
- Jangka hayat:
- Setahun
- Chip Dari:
- Hong Kong
- RoHS:
- Kaedah pembayaran:
-
- Cara penghantaran:
- Kategori Keluarga:
- KEY Components Co., LTD adalah Pengedar Komponen Elektronik yang menawarkan kategori produk termasuk: ...
- Kelebihan daya saing:
- We specialize in Infineon Technologies IAUS165N08S5N029ATMA1 electronic components. IAUS165N08S5N029ATMA1 can be shipped within 24 hours after order. If you have any demands for IAUS165N08S5N029ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IAUS165N08S5N029ATMA1 Atribut Produk
Nombor Bahagian :
IAUS165N08S5N029ATMA1
Pengeluar :
Infineon Technologies
Penerangan :
MOSFET N-CH 80V 660A PG-HSOG-8-1
Siri :
Automotive, AEC-Q101, OptiMOS™
Status Bahagian :
Active
Jenis FET :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) :
80V
Semasa - Saliran berterusan (Id) @ 25 ° C :
165A (Tc)
Voltan Drive (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
2.9 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
3.8V @ 108µA
Caj Gate (Qg) (Max) @ Vgs :
90nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
6370pF @ 40V
Ciri FET :
-
Pemberlakuan Kuasa (Max) :
167W (Tc)
Suhu Operasi :
-55°C ~ 175°C (TJ)
Jenis Pemasangan :
Surface Mount
Pakej Peranti Pembekal :
PG-HSOG-8-1
Pakej / Kes :
8-PowerSMD, Gull Wing
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