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  1. Rumah
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  3. DRAM
  4. DDR4
  5. K4A8G045WC-BCPB

Samsung Semiconductor - K4A8G045WC-BCPB

KEY Part #: K7359592

[25205pcs Stock]

    Nombor Bahagian:
    K4A8G045WC-BCPB
    Pengeluar:
    Samsung Semiconductor
    Penerangan terperinci:
    8 Gb 2G x 4 2133 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.
    Masa peneraju standard pengeluar:
    Dalam stok
    Jangka hayat:
    Setahun
    Chip Dari:
    Hong Kong
    RoHS:
    Kaedah pembayaran:
    Cara penghantaran:
    Kategori Keluarga:
    KEY Components Co., LTD adalah Pengedar Komponen Elektronik yang menawarkan kategori produk termasuk: ...
    Kelebihan daya saing:
    We specialize in Samsung Semiconductor K4A8G045WC-BCPB electronic components. K4A8G045WC-BCPB can be shipped within 24 hours after order. If you have any demands for K4A8G045WC-BCPB, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A8G045WC-BCPB Atribut Produk

    Nombor Bahagian : K4A8G045WC-BCPB
    Pengeluar : Samsung Semiconductor
    Penerangan : 8 Gb 2G x 4 2133 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production
    Siri : DDR4
    Ketumpatan : 8 Gb
    Org. : 2G x 4
    kelajuan : 2133 Mbps
    voltan : 1.2 V
    Temp. : 0 ~ 85 °C
    pakej : 78FBGA
    Status produk : Mass Production

    Berita terkini

    SSDs, DRAM and gaming: Unlocking a new level of performance
    Speed for the next generation of mobile devices
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Evolving Mobile Solutions: Samsung at MWC 2018
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Inside the building blocks of the 5G future
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Anda Juga Boleh Berminat Dalam
    • K4A4G085WE-BIRC

      Samsung Semiconductor

      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

    • K4ABG165WA-MCWE

      Samsung Semiconductor

      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

    • K4A4G085WE-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

    • K4A4G085WF-BCTD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

    • K4A4G085WF-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

    • K4A4G165WE-BCWE

      Samsung Semiconductor

      4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

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