ISSI, Integrated Silicon Solution Inc - IS42S83200G-6TL

KEY Part #: K938127

IS42S83200G-6TL Harga (USD) [19294pcs Stock]

  • 1 pcs$2.84145
  • 216 pcs$2.82732

Nombor Bahagian:
IS42S83200G-6TL
Pengeluar:
ISSI, Integrated Silicon Solution Inc
Penerangan terperinci:
IC DRAM 256M PARALLEL 54TSOP. DRAM 256M 32Mx8 166MHz SDR SDRAM, 3.3V
Masa peneraju standard pengeluar:
Dalam stok
Jangka hayat:
Setahun
Chip Dari:
Hong Kong
RoHS:
Kaedah pembayaran:
Cara penghantaran:
Kategori Keluarga:
KEY Components Co., LTD adalah Pengedar Komponen Elektronik yang menawarkan kategori produk termasuk: ...
Kelebihan daya saing:
We specialize in ISSI, Integrated Silicon Solution Inc IS42S83200G-6TL electronic components. IS42S83200G-6TL can be shipped within 24 hours after order. If you have any demands for IS42S83200G-6TL, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IS42S83200G-6TL Atribut Produk

Nombor Bahagian : IS42S83200G-6TL
Pengeluar : ISSI, Integrated Silicon Solution Inc
Penerangan : IC DRAM 256M PARALLEL 54TSOP
Siri : -
Status Bahagian : Active
Jenis Memori : Volatile
Format Memori : DRAM
Teknologi : SDRAM
Saiz Memori : 256Mb (32M x 8)
Frekuensi Jam : 166MHz
Tulis Masa Kitar - Kata, Halaman : -
Masa Capaian : 5.4ns
Antara Muka Memori : Parallel
Voltan - Bekalan : 3V ~ 3.6V
Suhu Operasi : 0°C ~ 70°C (TA)
Jenis Pemasangan : Surface Mount
Pakej / Kes : 54-TSOP (0.400", 10.16mm Width)
Pakej Peranti Pembekal : 54-TSOP II

Anda Juga Boleh Berminat Dalam
  • GD25S512MDFIGR

    GigaDevice Semiconductor (HK) Limited

    NOR FLASH.

  • 71V3576S150PFGI

    IDT, Integrated Device Technology Inc

    IC SRAM 4.5M PARALLEL 100TQFP.

  • 71V3577S75PFGI

    IDT, Integrated Device Technology Inc

    IC SRAM 4.5M PARALLEL 100TQFP. SRAM 4M 3.3V I/O PBSRAM SLOW X

  • TC58BYG2S0HBAI4

    Toshiba Memory America, Inc.

    4GB SLC BENAND 24NM BGA 9X11 EE. NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)

  • TC58BVG2S0HBAI4

    Toshiba Memory America, Inc.

    IC FLASH 4G PARALLEL 63TFBGA. NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM)

  • TC58NVG2S0HBAI4

    Toshiba Memory America, Inc.

    IC FLASH 4G PARALLEL 63TFBGA. NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM)