[3278pcs Stock]
- Nombor Bahagian:
- SIHB22N60S-GE3
- Pengeluar:
- Vishay Siliconix
- Penerangan terperinci:
- MOSFET N-CH 650V TO263.
- Masa peneraju standard pengeluar:
- Dalam stok
- Jangka hayat:
- Setahun
- Chip Dari:
- Hong Kong
- RoHS:
- Kaedah pembayaran:
-
- Cara penghantaran:
- Kategori Keluarga:
- KEY Components Co., LTD adalah Pengedar Komponen Elektronik yang menawarkan kategori produk termasuk: ...
- Kelebihan daya saing:
- We specialize in Vishay Siliconix SIHB22N60S-GE3 electronic components. SIHB22N60S-GE3 can be shipped within 24 hours after order. If you have any demands for SIHB22N60S-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHB22N60S-GE3 Atribut Produk
Nombor Bahagian :
SIHB22N60S-GE3
Pengeluar :
Vishay Siliconix
Penerangan :
MOSFET N-CH 650V TO263
Siri :
S
Status Bahagian :
Obsolete
Jenis FET :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) :
600V
Semasa - Saliran berterusan (Id) @ 25 ° C :
22A (Tc)
Voltan Drive (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
190 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Caj Gate (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2.81nF @ 25V
Ciri FET :
-
Pemberlakuan Kuasa (Max) :
250W (Tc)
Suhu Operasi :
-55°C ~ 150°C (TJ)
Jenis Pemasangan :
Surface Mount
Pakej Peranti Pembekal :
D²PAK (TO-263)
Pakej / Kes :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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