SIS606BDN-T1-GE3 Harga (USD) [132616pcs Stock]
- 1 pcs$0.27891
- Nombor Bahagian:
- SIS606BDN-T1-GE3
- Pengeluar:
- Vishay Siliconix
- Penerangan terperinci:
- MOSFET N-CHAN 100V POWERPAK 1212.
- Masa peneraju standard pengeluar:
- Dalam stok
- Jangka hayat:
- Setahun
- Chip Dari:
- Hong Kong
- RoHS:
- Kaedah pembayaran:
-
- Cara penghantaran:
- Kategori Keluarga:
- KEY Components Co., LTD adalah Pengedar Komponen Elektronik yang menawarkan kategori produk termasuk: ...
- Kelebihan daya saing:
- We specialize in Vishay Siliconix SIS606BDN-T1-GE3 electronic components. SIS606BDN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS606BDN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIS606BDN-T1-GE3 Atribut Produk
Nombor Bahagian :
SIS606BDN-T1-GE3
Pengeluar :
Vishay Siliconix
Penerangan :
MOSFET N-CHAN 100V POWERPAK 1212
Siri :
TrenchFET® Gen IV
Status Bahagian :
Active
Jenis FET :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) :
100V
Semasa - Saliran berterusan (Id) @ 25 ° C :
9.4A (Ta), 35.3A (Tc)
Voltan Drive (Max Rds On, Min Rds On) :
7.5V, 10V
Rds On (Max) @ Id, Vgs :
17.4 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Caj Gate (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1470pF @ 50V
Ciri FET :
-
Pemberlakuan Kuasa (Max) :
3.7W (Ta), 52W (Tc)
Suhu Operasi :
-55°C ~ 150°C (TJ)
Jenis Pemasangan :
Surface Mount
Pakej Peranti Pembekal :
PowerPAK® 1212-8
Pakej / Kes :
PowerPAK® 1212-8
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