SIRA10BDP-T1-GE3 Harga (USD) [274892pcs Stock]
- 1 pcs$0.13455
- Nombor Bahagian:
- SIRA10BDP-T1-GE3
- Pengeluar:
- Vishay Siliconix
- Penerangan terperinci:
- MOSFET N-CHAN 30V.
- Masa peneraju standard pengeluar:
- Dalam stok
- Jangka hayat:
- Setahun
- Chip Dari:
- Hong Kong
- RoHS:
- Kaedah pembayaran:
-
- Cara penghantaran:
- Kategori Keluarga:
- KEY Components Co., LTD adalah Pengedar Komponen Elektronik yang menawarkan kategori produk termasuk: ...
- Kelebihan daya saing:
- We specialize in Vishay Siliconix SIRA10BDP-T1-GE3 electronic components. SIRA10BDP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIRA10BDP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIRA10BDP-T1-GE3 Atribut Produk
Nombor Bahagian :
SIRA10BDP-T1-GE3
Pengeluar :
Vishay Siliconix
Penerangan :
MOSFET N-CHAN 30V
Siri :
TrenchFET® Gen IV
Status Bahagian :
Active
Jenis FET :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Salurkan ke Voltan Sumber (Vdss) :
30V
Semasa - Saliran berterusan (Id) @ 25 ° C :
30A (Ta), 60A (Tc)
Voltan Drive (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
3.6 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA
Caj Gate (Qg) (Max) @ Vgs :
36.2nC @ 10V
Vgs (Max) :
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds :
1710pF @ 15V
Ciri FET :
-
Pemberlakuan Kuasa (Max) :
5W (Ta), 43W (Tc)
Suhu Operasi :
-55°C ~ 150°C (TJ)
Jenis Pemasangan :
Surface Mount
Pakej Peranti Pembekal :
PowerPAK® SO-8
Pakej / Kes :
PowerPAK® SO-8
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