SCTW90N65G2V Harga (USD) [1553pcs Stock]
- 1 pcs$27.86749
- Nombor Bahagian:
- SCTW90N65G2V
- Pengeluar:
- STMicroelectronics
- Penerangan terperinci:
- SILICON CARBIDE POWER MOSFET 650.
- Masa peneraju standard pengeluar:
- Dalam stok
- Jangka hayat:
- Setahun
- Chip Dari:
- Hong Kong
- RoHS:
- Kaedah pembayaran:
-
- Cara penghantaran:
- Kategori Keluarga:
- KEY Components Co., LTD adalah Pengedar Komponen Elektronik yang menawarkan kategori produk termasuk: ...
- Kelebihan daya saing:
- We specialize in STMicroelectronics SCTW90N65G2V electronic components. SCTW90N65G2V can be shipped within 24 hours after order. If you have any demands for SCTW90N65G2V, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SCTW90N65G2V Atribut Produk
Nombor Bahagian :
SCTW90N65G2V
Pengeluar :
STMicroelectronics
Penerangan :
SILICON CARBIDE POWER MOSFET 650
Siri :
-
Status Bahagian :
Active
Jenis FET :
N-Channel
Teknologi :
SiCFET (Silicon Carbide)
Salurkan ke Voltan Sumber (Vdss) :
650V
Semasa - Saliran berterusan (Id) @ 25 ° C :
90A (Tc)
Voltan Drive (Max Rds On, Min Rds On) :
18V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 50A, 18V
Vgs (th) (Max) @ Id :
5V @ 250µA
Caj Gate (Qg) (Max) @ Vgs :
157nC @ 18V
Vgs (Max) :
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds :
3300pF @ 400V
Ciri FET :
-
Pemberlakuan Kuasa (Max) :
390W (Tc)
Suhu Operasi :
-55°C ~ 200°C (TJ)
Jenis Pemasangan :
Through Hole
Pakej Peranti Pembekal :
HiP247™
Pakej / Kes :
TO-247-3
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