ISSI, Integrated Silicon Solution Inc - IS46R16320E-6BLA1-TR

KEY Part #: K936913

IS46R16320E-6BLA1-TR Harga (USD) [15370pcs Stock]

  • 1 pcs$2.98124

Nombor Bahagian:
IS46R16320E-6BLA1-TR
Pengeluar:
ISSI, Integrated Silicon Solution Inc
Penerangan terperinci:
IC DRAM 512M PARALLEL 166MHZ. DRAM Automotive (-40 to +85C), 512M, 2.5V, DDR1, 32Mx16, 166MHz, 60 ball FBGA RoHS, T&R
Masa peneraju standard pengeluar:
Dalam stok
Jangka hayat:
Setahun
Chip Dari:
Hong Kong
RoHS:
Kaedah pembayaran:
Cara penghantaran:
Kategori Keluarga:
KEY Components Co., LTD adalah Pengedar Komponen Elektronik yang menawarkan kategori produk termasuk: ...
Kelebihan daya saing:
We specialize in ISSI, Integrated Silicon Solution Inc IS46R16320E-6BLA1-TR electronic components. IS46R16320E-6BLA1-TR can be shipped within 24 hours after order. If you have any demands for IS46R16320E-6BLA1-TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IS46R16320E-6BLA1-TR Atribut Produk

Nombor Bahagian : IS46R16320E-6BLA1-TR
Pengeluar : ISSI, Integrated Silicon Solution Inc
Penerangan : IC DRAM 512M PARALLEL 166MHZ
Siri : -
Status Bahagian : Active
Jenis Memori : Volatile
Format Memori : DRAM
Teknologi : SDRAM - DDR
Saiz Memori : 512Mb (32M x 16)
Frekuensi Jam : 166MHz
Tulis Masa Kitar - Kata, Halaman : 15ns
Masa Capaian : 700ps
Antara Muka Memori : Parallel
Voltan - Bekalan : 2.3V ~ 2.7V
Suhu Operasi : -40°C ~ 85°C (TA)
Jenis Pemasangan : Surface Mount
Pakej / Kes : 60-TFBGA
Pakej Peranti Pembekal : 60-TFBGA (13x8)

Anda Juga Boleh Berminat Dalam
  • 71V30S55TFG8

    IDT, Integrated Device Technology Inc

    IC SRAM 8K PARALLEL 64TQFP. SRAM 1Kx8 ASYNCHRONOUS 3.3V DUAL-PORT RAM

  • AT28C256E-15SU

    Microchip Technology

    IC EEPROM 256K PARALLEL 28SOIC. EEPROM 256K HI-ENDURANCE SDP- 150NS IND TEMP

  • AT28HC256E-12SU-T

    Microchip Technology

    IC EEPROM 256K PARALLEL 28SOIC. EEPROM 120NS, SOIC, IND TEMP, GREEN

  • 71V25761S183PFGI

    IDT, Integrated Device Technology Inc

    IC SRAM 4.5M PARALLEL 100TQFP. SRAM 128Kx36 SYNC 3.3V PIPELINED BURST SRAM

  • W29N04GZBIBA

    Winbond Electronics

    IC FLASH 4G PARALLEL 63VFBGA. NAND Flash 4G-bit NAND flash, 1.8V, 4-bit ECC, 1.8V, x8

  • W29N04GWBIBA

    Winbond Electronics

    IC FLASH 4G PARALLEL 63VFBGA. NAND Flash 4G-bit NAND flash, 1.8V, 4-bit ECC, 1.8V, x16