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  1. Rumah
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  5. K4B4G1646D-BHMA

Samsung Semiconductor - K4B4G1646D-BHMA

KEY Part #: K7359692

[21860pcs Stock]

    Nombor Bahagian:
    K4B4G1646D-BHMA
    Pengeluar:
    Samsung Semiconductor
    Penerangan terperinci:
    4 Gb 256M x 16 1866 Mbps 1.35 V -40 ~ 105 °C 96FBGA Mass Production.
    Masa peneraju standard pengeluar:
    Dalam stok
    Jangka hayat:
    Setahun
    Chip Dari:
    Hong Kong
    RoHS:
    Kaedah pembayaran:
    Cara penghantaran:
    Kategori Keluarga:
    KEY Components Co., LTD adalah Pengedar Komponen Elektronik yang menawarkan kategori produk termasuk: ...
    Kelebihan daya saing:
    We specialize in Samsung Semiconductor K4B4G1646D-BHMA electronic components. K4B4G1646D-BHMA can be shipped within 24 hours after order. If you have any demands for K4B4G1646D-BHMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G1646D-BHMA Atribut Produk

    Nombor Bahagian : K4B4G1646D-BHMA
    Pengeluar : Samsung Semiconductor
    Penerangan : 4 Gb 256M x 16 1866 Mbps 1.35 V -40 ~ 105 °C 96FBGA Mass Production
    Siri : DDR3
    Ketumpatan : 4 Gb
    Org. : 256M x 16
    kelajuan : 1866 Mbps
    voltan : 1.35 V
    Temp. : -40 ~ 105 °C
    pakej : 96FBGA
    Status produk : Mass Production

    Berita terkini

    Samsung Memory Solutions for Automotive
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Autonomous Driving and the Quest for Safety
    Speed for the next generation of mobile devices
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Mass Production of Fifth-Generation V-NAND has Started
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Automotive Driven by Small Packages Under the Hood
    How Will 5G Impact on Memory?
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