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  1. Rumah
  2. Produk
  3. DRAM
  4. DDR3
  5. K4B1G1646I-BYMA

Samsung Semiconductor - K4B1G1646I-BYMA

KEY Part #: K7359647

[20093pcs Stock]

    Nombor Bahagian:
    K4B1G1646I-BYMA
    Pengeluar:
    Samsung Semiconductor
    Penerangan terperinci:
    1 Gb 64M x 16 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.
    Masa peneraju standard pengeluar:
    Dalam stok
    Jangka hayat:
    Setahun
    Chip Dari:
    Hong Kong
    RoHS:
    Kaedah pembayaran:
    Cara penghantaran:
    Kategori Keluarga:
    KEY Components Co., LTD adalah Pengedar Komponen Elektronik yang menawarkan kategori produk termasuk: ...
    Kelebihan daya saing:
    We specialize in Samsung Semiconductor K4B1G1646I-BYMA electronic components. K4B1G1646I-BYMA can be shipped within 24 hours after order. If you have any demands for K4B1G1646I-BYMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B1G1646I-BYMA Atribut Produk

    Nombor Bahagian : K4B1G1646I-BYMA
    Pengeluar : Samsung Semiconductor
    Penerangan : 1 Gb 64M x 16 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production
    Siri : DDR3
    Ketumpatan : 1 Gb
    Org. : 64M x 16
    kelajuan : 1866 Mbps
    voltan : 1.35 V
    Temp. : 0 ~ 85 °C
    pakej : 96FBGA
    Status produk : Mass Production

    Berita terkini

    Bringing Artificial Intelligence to Devices Everywhere
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    The future of NAND technology
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    How Will 5G Impact on Memory?
    Speed for the next generation of mobile devices
    Unlocking the Power of Cloud Computing
    Samsung Memory Solutions for Automotive
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    Evolving Mobile Solutions: Samsung at MWC 2018
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      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

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      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

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      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 432FBGA Mass Production.

    • K3UH6H60BM-AGCL

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      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    • K3UH6H60BM-EGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH7H70AM-AGCL

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      64 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

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