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  1. Rumah
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  4. LPDDR4X
  5. K4UHE3D4AA-GUCL

Samsung Semiconductor - K4UHE3D4AA-GUCL

KEY Part #: K7359755

[25313pcs Stock]

    Nombor Bahagian:
    K4UHE3D4AA-GUCL
    Pengeluar:
    Samsung Semiconductor
    Penerangan terperinci:
    24 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 125 °C 200FBGA Mass Production.
    Masa peneraju standard pengeluar:
    Dalam stok
    Jangka hayat:
    Setahun
    Chip Dari:
    Hong Kong
    RoHS:
    Kaedah pembayaran:
    Cara penghantaran:
    Kategori Keluarga:
    KEY Components Co., LTD adalah Pengedar Komponen Elektronik yang menawarkan kategori produk termasuk: ...
    Kelebihan daya saing:
    We specialize in Samsung Semiconductor K4UHE3D4AA-GUCL electronic components. K4UHE3D4AA-GUCL can be shipped within 24 hours after order. If you have any demands for K4UHE3D4AA-GUCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4UHE3D4AA-GUCL Atribut Produk

    Nombor Bahagian : K4UHE3D4AA-GUCL
    Pengeluar : Samsung Semiconductor
    Penerangan : 24 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 125 °C 200FBGA Mass Production
    Siri : DDR3
    Ketumpatan : 24 Gb
    Org. : x32
    kelajuan : 4266 Mbps
    voltan : 1.8 / 1.1 / 0.6 V
    Temp. : -40 ~ 125 °C
    pakej : 200FBGA
    Status produk : Mass Production

    Berita terkini

    SSDs, DRAM and gaming: Unlocking a new level of performance
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    How Will 5G Impact on Memory?
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Autonomous Driving and the Quest for Safety
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Anda Juga Boleh Berminat Dalam
    • M392A2K43BB0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A2K43BB0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A4K40BM0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2133 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M392A4K40BM0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2400 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

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