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  1. Rumah
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  5. K4UBE3D4AA-MGCL

Samsung Semiconductor - K4UBE3D4AA-MGCL

KEY Part #: K7359748

[17741pcs Stock]

    Nombor Bahagian:
    K4UBE3D4AA-MGCL
    Pengeluar:
    Samsung Semiconductor
    Penerangan terperinci:
    32 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 200FBGA Mass Production.
    Masa peneraju standard pengeluar:
    Dalam stok
    Jangka hayat:
    Setahun
    Chip Dari:
    Hong Kong
    RoHS:
    Kaedah pembayaran:
    Cara penghantaran:
    Kategori Keluarga:
    KEY Components Co., LTD adalah Pengedar Komponen Elektronik yang menawarkan kategori produk termasuk: ...
    Kelebihan daya saing:
    We specialize in Samsung Semiconductor K4UBE3D4AA-MGCL electronic components. K4UBE3D4AA-MGCL can be shipped within 24 hours after order. If you have any demands for K4UBE3D4AA-MGCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4UBE3D4AA-MGCL Atribut Produk

    Nombor Bahagian : K4UBE3D4AA-MGCL
    Pengeluar : Samsung Semiconductor
    Penerangan : 32 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 200FBGA Mass Production
    Siri : DDR3
    Ketumpatan : 32 Gb
    Org. : x32
    kelajuan : 4266 Mbps
    voltan : 1.8 / 1.1 / 0.6 V
    Temp. : -25 ~ 85 °C
    pakej : 200FBGA
    Status produk : Mass Production

    Berita terkini

    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    Autonomous Driving and the Quest for Safety
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Unlocking the Power of Cloud Computing
    Inside the building blocks of the 5G future
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    The Ultra-Low Latency SSD, Z-SSD
    Anda Juga Boleh Berminat Dalam
    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43CB2-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

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